25.08.2024 aktualisiert
SÖ
100 % verfügbar
Teaching Assistant, RF Design Engineer, Research Assistant (HiWi)
Rutesheim, Deutschland
Nur Remote
M.Sc.Skills
VerstärkerAnalogelektronikUnterrichtenBoolesche AlgebraDatenübertragungenIC DesignLogiksyntheseTransistorElektromagnetismusVersuchsdatenMATLABMikrowellentechnikCadence VirtuosoBoard-DesignHochfrequenztechnik
Digital Logic, Virtuoso, Mobile Communications, experimental data, LVS, Logic Design, Matlab, PIC, Physical Design
Erfahrung
Berufserfahrungmehr als 10 Jahre
Freelancer seit2024
Sprachen
DeutschGrundkenntnisseEnglischverhandlungssicherTürkischMuttersprache
Projekthistorie
* A fully integrated 0.25 μm SiGe BiCMOS transformer based 5-6 GHz Power Amplifier (PA)
and Low Noise Amplifier (LNA) on the thinned substrate for IoT applications.
* A fully integrated 130 nm CMOS Muxed-Based Offset QPSK transmitter at 5.5 GHz:
comprising of a frequency synthesizer, a serializer (16 bit 10 Mb/s parallel data),
NAND-Based Multiplexer, a Class-D -1 PA, and an isolated NMOS switch.
* RF PCB Design: Rogers 3003 material w/ 30 μm copper thickness and 75 μm resolution of
structures.
* Flexible Module (Hybrid System-in-Foil (HySiF)) design: A polyimide substrate w/ 10 μm
pitch wafer-level and ~70 μm system thickness.
* Development and layout of a 2:1 analog multiplexer (AMUX) IC using a IHP 130 nm SiGe-
G3 technology: The linear signal path offers ~100 GHz 3-dB-bandwidth. (Since 11/2022)
and Low Noise Amplifier (LNA) on the thinned substrate for IoT applications.
* A fully integrated 130 nm CMOS Muxed-Based Offset QPSK transmitter at 5.5 GHz:
comprising of a frequency synthesizer, a serializer (16 bit 10 Mb/s parallel data),
NAND-Based Multiplexer, a Class-D -1 PA, and an isolated NMOS switch.
* RF PCB Design: Rogers 3003 material w/ 30 μm copper thickness and 75 μm resolution of
structures.
* Flexible Module (Hybrid System-in-Foil (HySiF)) design: A polyimide substrate w/ 10 μm
pitch wafer-level and ~70 μm system thickness.
* Development and layout of a 2:1 analog multiplexer (AMUX) IC using a IHP 130 nm SiGe-
G3 technology: The linear signal path offers ~100 GHz 3-dB-bandwidth. (Since 11/2022)
* Electronic Circuits, Physical Design of Integrated Circuits, Master Thesis Supervisions.
* Transmitter/Receiver front end RF sub-modules up to 7 GHz.